document number: 93101 for technical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-09 1 "high side chopper" igbt sot-227 (ultrafast igbt), 50 a GB50NA120UX vishay high power products features ? npt generation v igbt technology ? square rbsoa ? hexfred ? clamping diode ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( 5 nh typical) ? industry standard outline ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating ? easy to assemble and parallel ? direct mounting on heatsink ? plug-in compatible with other sot-227 packages ? low emi, requires less snubbing product summary v ces 1200 v i c dc 50 a at 92 c v ce(on) typical at 50 a, 25 c 3.22 v sot-227 absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 1200 v continuous collector current i c t c = 25 c 84 a t c = 80 c 57 pulsed collector current i cm 150 clamped inductive load current i lm 150 diode continuous forward current i f t c = 25 c 76 t c = 80 c 52 gate to emitter voltage v ge 20 v power dissipation, igbt p d t c = 25 c 431 w t c = 80 c 242 power dissipation, diode p d t c = 25 c 278 t c = 80 c 156 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93101 2 revision: 23-sep-09 GB50NA120UX vishay high power products "high side chopper" igbt sot-227 (ultrafast igbt), 50 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 1200 - - v collector to emitter voltage v ce(on) v ge = 15 v, i c = 25 a - 2.46 - v ge = 15 v, i c = 50 a - 3.22 2.80 v ge = 15 v, i c = 25 a, t j = 125 c - 2.84 3.60 v ge = 15 v, i c = 50 a, t j = 125 c - 3.78 3.0 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 4 5 4 temperature coefficient of threshold voltage v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 1200 v - 6 50 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.7 2.0 ma diode reverse breakdown voltage v br i r = 1 ma 1200 - - v diode forward voltage drop v fm i c = 25 a, v ge = 0 v - 1.99 2.42 v i c = 50 a, v ge = 0 v - 2.53 3.00 i c = 25 a, v ge = 0 v, t j = 125 c - 1.96 2.30 i c = 50 a, v ge = 0 v, t j = 125 c - 2.66 3.08 diode reverse leakage current i rm v r = v r rated - 4 50 a t j = 125 c, v r = v r rated - 0.6 3 ma gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 50 a, v cc = 600 v, v ge = 15 v - 400 - nc gate to emitter charge (turn-on) q ge -43- gate to collector charge (turn-on) q gc - 187 - turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 , l = 500 h energy losses include tail and diode recovery (see fig. 18) -2.72- mj turn-off switching loss e off -1.11- total switching loss e tot -3.83- turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 , l = 500 h, t j = 125 c -3.94- turn-off switching loss e off -2.31- total switching loss e tot -6.25- turn-on delay time t d(on) - 191 - ns rise time t r -53- turn-off delay time t d(off) - 223 - fall time t f - 143 - reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a, r g = 22 , v ge = 15 v to 0 v, v cc = 900 v, v p = 1200 v fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 129 161 ns diode peak reverse current i rr -1114a diode recovery charge q rr - 700 1046 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 208 257 ns diode peak reverse current i rr -1721a diode recovery charge q rr - 1768 2698 nc
document number: 93101 for technical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-09 3 GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay high power products fig. 1 - maximum dc igbt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collec tor current characteristics fig. 4 - typical igbt zero gate voltage collector current thermal and mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 40 - 150 c thermal resistance, junction to case igbt r thjc - - 0.29 c/w diode - - 0.45 thermal resistance, case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g allowable case temperature (c) i c - continuous collector current (a) 0 10203040506070 8 090 0 160 100 120 140 20 40 60 8 0 i c (a) v ce (v) 1 10 100 1000 10 000 0.01 0.1 1 1000 10 100 i c (a) v ce (v) 024 8 13 6 57 0 200 25 50 100 75 150 125 175 t j = 125 c t j = 25 c i ces (ma) v ces (v) 100 300 500 700 900 1100 0.0001 10 1 0.01 0.1 0.001 t j = 125 c t j = 25 c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93101 4 revision: 23-sep-09 GB50NA120UX vishay high power products "high side chopper" igbt sot-227 (ultrafast igbt), 50 a fig. 5 - typical igbt threshold voltage fig. 6 - typical igbt collector to emitter voltage vs. junction temperature, v ge = 15 v fig. 7 - maximum dc forward current vs. case temperature fig. 8 - typical diode forward characteristics fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 , v ge = 15 v v g eth (v) i c (ma) 0.0002 0.0004 0.0006 0.000 8 0.001 3.0 5.5 4.0 4.5 5.0 3.5 t j = 25 c t j = 125 c v ce (v) t j (c) 10 50 90 30 70 130 110 150 2 6 4 5 3 100 a 50 a 25 a allowable case temperature (c) i f - continuous forward current (a) 010 30 50 20 40 60 70 8 0 0 160 100 120 140 20 40 60 8 0 i f (a) v fm (v) 01 3 2 456 0 200 25 75 100 150 125 175 50 t j = 125 c t j = 25 c ener g y (mj) i c (a) 10 20 30 40 50 0 4 2 3 1 e off e on switchin g time (ns) i c (a) 010 50 30 40 20 60 10 1000 100 t d(off) t d(on) t f t r
document number: 93101 for technical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-09 5 GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay high power products fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 50 a, l = 500 h, v cc = 600 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 600 v, i c = 50 a, v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 15 - typical q rr diode vs. di f /dt, v r = 200 v, i f = 50 a ener g y (mj) r g ( ) 0 1020304050 0 12 6 10 8 4 2 e on e off switchin g time (ns) r g ( ) 02030 10 40 50 10 100 1000 t d(on) t d(off) t f t r t rr (ns) di f /dt (a/s) 100 1000 70 250 110 150 190 210 230 90 130 170 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 40 10 20 30 35 5 15 25 t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 400 2650 900 1400 1900 2400 2150 650 1150 1650 t j = 125 c t j = 25 c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93101 6 revision: 23-sep-09 GB50NA120UX vishay high power products "high side chopper" igbt sot-227 (ultrafast igbt), 50 a fig. 16 - maximum thermal impedance z thjc characteristics (igbt) fig. 17 - maximum thermal impedance z thjc characteristics (diode) 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
document number: 93101 for technical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-09 7 GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay high power products fig. 18a - clamped inductive load test circuit fig. 18b - pulsed collector current test circuit fig. 19a - switching loss test circuit fig. 19b - switching loss waveforms test circuit * dri v er same type as d.u.t.; v c = 8 0 % of v ce(max) * n ote: d u e to the 50 v po w er s u pply, p u lse w idth and ind u ctor w ill increase to o b tain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ dri v er - 5 v + - r g v cc + - t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93101 8 revision: 23-sep-09 GB50NA120UX vishay high power products "high side chopper" igbt sot-227 (ultrafast igbt), 50 a ordering information table circuit configuration 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (50 = 50 a) 4 - circuit configuration (n = high side chopper) 5 - package indicator (a = sot-227) 6 - voltage rating (120 = 1200 v) 8 - x = f/w hexfred ? diode 7 - speed/type (u = ultrafast igbt) device code 5 13 24 678 g b 50 n a 120 u x 3 1 4 2 links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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